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S T M6930
S amHop Microelectronics C orp. Arp,20 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
55V
F E AT UR E S
( m W ) Max
ID
4.8A
R DS (ON)
S uper high dense cell design for low R DS (ON).
45 @ V G S = 10V 65 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage
a
S ymbol Vspike VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG
d
Limit 60 55 25 4.8 4.1 30 1.7 2 1.44 -55 to 150
Unit V V V A A A A W C
Drain C urrent-C ontinuous @ Ta -P ulsed
b
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA
1
62.5
C /W
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS = 0V, ID = 250uA VDS = 44V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 4.5A VGS =4.5V, ID= 4A VDS = 5V, VGS = 10V VDS = 5V, ID = 4.5A
Min Typ C Max Unit
55 1 V uA 100 nA 1.0 1.9 35 55 20 9 900 80 60 2 19 5 22 12 19 9 4 4.5 25 7 29 16 25 12 5 6 1170 104 78 2.5 45 65 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 30V ID = 4.8 A VGS = 10V R GE N = 6 ohm VDS =48V, ID =4.8A,VGS =10V VDS =48V, ID =4.8A,VGS =4.5V VDS =48V, ID = 4.8 A VGS =10V
2
ns ns ns ns nC nC nC nC
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.8 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max
20 V G S =10,9,8,7,6,5V 16 20 25 25 C -55 C
ID, Drain C urrent(A)
12
ID, Drain C urrent (A)
V G S =4V
T j=125 C 15
8
10
4 V G S =3V 0 0 1 2 3 4 5 6
5 0 0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500 1.6
F igure 2. Trans fer C haracteris tics
V G S =10V
R DS (ON), On-R es is tance Normalized
1250
1.4 1.2 1.0 0.6 0.4 0 -50
C , C apacitance (pF )
V G S =10V ID=4.8A
1000 750 500 250 0 C rs s 0 5 10 15 20
C is s
C os s 25 30
-25
0
25
50
75
100
125 150 T j=( C )
V DS , Drain-to S ource Voltage (V )
ID, Drain C urrent(A)
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3
S T M6930
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
15
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
gFS , T rans conductance (S )
Is , S ource-drain current (A)
20
12 9 6 3 0 0 5 10 V DS =5V 15
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10 8 6 4 2 0 0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
40 10
R (O DS N) L im it
V G S , G ate to S ource V oltage (V )
V DS =48V ID=4.8A
ID, Drain C urrent (A)
10 10
1s
DC
ms
0m
s
11
0.1 0.03 0.1
VGS =10V S ingle P ulse T A=25 C 1 10 30 60
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge 4
F igure 10. Maximum S afe O perating Area
S T M6930
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1 P DM 0.05 0.02 0.01
on
0.1
t1 1. 2. 3. 4.
t2
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
S T M6930
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45X
A
e
0.05 TYP.
0.016 TYP.
B
A1
0.008 TYP.
C
H
S Y MB OLS A A1 D E H L
MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X
6
S T M6930
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:P
PACKAGE SOP 8N 150O A0
6.40
B0
5.20
K0
2.10
D0
r1.5 (MIN)
D1
r1.5 + 0.1 - 0.0
E
12.0 O0.3
E1
1.75
E2
5.5 O0.05
P0
8.0
P1
4.0
P2
2.0 O0.05
T
0.3 O0.05
SO-8 Reel
UNIT:P
TAPE SIZE
12 P
REEL SIZE
r330
M
330 O 1
N
62 O1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
r12.75 + 0.15
K
S
2.0 O0.15
G
R
V
7

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